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fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers ?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 december 2011 fod814 series, fod817 series 4-pin high operating temperature phototransistor optocouplers features ac input response (fod814 only) applicable to pb-free ir reflow soldering compact 4-pin package current transfer ratio in selected groups: fod814: 20?00% fod817: 50?00% fod814a: 50?50% fod817a: 80?60% fod817b: 130?60% fod817c: 200?00% fod817d: 300?00% c-ul, ul and vde approved high input-output isolation voltage of 5000vrms minimum bv ceo of 70v guaranteed higher operating temperatures (versus h11axxx counterparts) applications fod814 series ac line monitor unknown polarity dc sensor telephone line interface fod817 series power supply regulators digital logic inputs microprocessor inputs description the fod814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. the fod817 series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. functional block diagram 1 anode, cathode 2 4 3 cathode, anode collector emitter 1 2 4 3 emitter collector anode cathode fod814 fod817 4 1
?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 2 fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers absolute maximum ratings (t a = 25? unless otherwise speci?d.) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. symbol parameter v alue units fod814 fod817 tot al device t stg storage temperature -55 to +150 ? t opr operating temperature -55 to +105 -55 to +110 ? t sol lead solder temperature 260 for 10 sec ? t j j unction temperature 125 max. ? jc j unction-to-case thermal resistance 210 ?/w p tot t otal power dissipation 200 mw emitter i f continuous forward current ?0 50 ma v r reverse voltage 6 p d po w er dissipation derate above 100? 70 1.7 mw mw/? detector v ceo collector-emitter voltage 70 v v eco emitter-collector voltage 6 v i c continuous collector current 50 ma p c collector power dissipation derate above 90? 150 2.9 mw mw/?
?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 3 fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers electrical characteristics (t a = 25? unless otherwise speci?d.) individual component characteristics dc transfer characteristics ac t ransfer characteristics *typical values at t a = 25? symbol parameter device test conditions min. typ.* max. unit emitter v f f orward voltage fod814 i f = ?0ma 1.2 1.4 v fod817 i f = 20ma 1.2 1.4 i r reverse leakage current fod817 v r = 4.0v 10 ? c t te r minal capacitance fod814 v = 0, f = 1khz 50 250 pf fod817 v = 0, f = 1khz 30 250 detector i ceo collector dark current fod814 v ce = 20v, i f = 0 100 na fod817 v ce = 20v, i f = 0 100 bv ceo collector-emitter breakdown v oltage fod814 i c = 0.1ma, i f = 0 70 v fod817 i c = 0.1ma, i f = 0 70 bv eco emitter-collector breakdown v oltage fod814 i e = 10?, i f = 0 6 v fod817 i e = 10?, i f = 0 6 symbol dc characteristic device test conditions min. typ.* max. unit ctr current transfer ratio fod814 i f = ?ma, v ce = 5v (1) 20 300 % fod814a 50 150 fod817 i f = 5ma, v ce = 5v (1) 50 600 fod817a 80 160 fod817b 130 260 fod817c 200 400 fod817d 300 600 v ce (sat) collector-emitter saturation voltage fod814 i f = ?0ma, i c = 1ma 0.1 0.2 v fod817 i f = 20ma, i c = 1ma 0.1 0.2 symbol ac characteristic device test conditions min. typ.* max. unit f c cut-off frequency fod814 v ce = 5v, i c = 2ma, r l = 100 ? , -3db 15 80 khz t r response time (rise) fod814, fod817 v ce = 2 v, i c = 2ma, r l = 100 ? (2) 418s t f response time (fall) fod814, fod817 318s
?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 4 fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers electrical characteristics (t a = 25? unless otherwise speci?d.) (continued) isolation characteristics *typical values at t a = 25? notes: 1. current transfer ratio (ctr) = i c /i f x 100%. 2. for test circuit setup and waveforms, refer to page 7. 3. for this test, pins 1 and 2 are common, and pins 3 and 4 are common. symbol characteristic device test conditions min. typ.* max. units v iso input-output isolation v oltage (3) fod814, fod817 f = 60hz, t = 1 min, i i-o 2? 5000 vac(rms) r iso isolation resistance fod814, fod817 v i-o = 500vdc 5x10 10 1x10 11 ? c iso isolation capacitance fod814, fod817 v i-o = 0, f = 1 mhz 0.6 1.0 pf
?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 5 fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers typical electrical/optical characteristics (t a = 25? unless otherwise speci?d.) 0 1 2 3 4 5 6 collector power dissipation p c (mw) fig. 1 collector power dissipation vs. ambient temperature (fod814) forward current i f (ma) collector-emitter saturation voltage v ce (sat) (v) fig. 3 collector-emitter saturation voltage vs. forward current fig. 5 forward current vs. forward voltage (fod817) forward voltage v f (v) forward current i f (ma) forward current i f (ma) current transfer ratio ctr ( %) fig. 6 current transfer ratio vs. forward current ambient temperature t a (?) 15.0 12.5 10.0 7.5 5.0 2.5 0 v = ce 5v ta= 25? ic = 0 .5 ma 1m a 3m a ta = 25c 7m a 5m a 0 0. 1 0.2 0.5 1 2 5 10 20 50 100 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 -55 0 50 100 150 200 collector power dissipation p c (mw) fig. 2 collector power dissipation vs. ambient temperature (fod817) ambient temperature t a (?) -40 -20 0 20 40 60 80 100 120 -55 0 50 100 150 200 0.5 1.0 1.5 2.0 t a = 110 o c 75 o c 50 o c 25 o c 0 o c -30 o c -55 o c 0.1 1 10 100 fod814 fod817 fig. 4 forward current vs. forward voltage (fod814) forward voltage v f (v) forward current i f (ma) 0.5 1.0 1.5 2.0 t a = 105 o c 75 o c 50 o c 25 o c 0 o c -30 o c -55 o c 0.1 1 10 100
?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 6 fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers typical electrical/optical characteristics (continued) (t a = 25? unless otherwise speci?d.) ambient temperature t a (?) fig. 10 collector-emitter saturation voltage vs. ambient temperature collector-emitter saturation voltage v ce (sat) (v) led power dissipation p led (mw) -60 -40 -20 0 20 40 60 80 100 120 0.00 0.02 0.04 0.06 0.08 0.10 0.12 i f = 20ma i c = 1ma fig. 11 led power dissipation vs. ambient temperature (fod814) ambient temperature t a (?) -40 -20 0 20 40 60 80 100 120 -55 0 20 40 60 80 100 led power dissipation p led (mw) fig. 12 led power dissipation vs. ambient temperature (fod817) ambient temperature t a (?) -40 -20 0 20 40 60 80 100 120 -55 0 20 40 60 80 100 ambient temperature t a (?) relative current transfer ratio (%) fig. 9 relative current transfer ratio vs. ambient temperature -60 -40 -20 0 20 40 60 80 100 120 i f = 1 ma v ce = 5v 0 20 40 60 80 100 120 140 160 fod814 i f = 5ma v ce = 5v fod817 collector-emitter voltage v ce (v) collector current i c (ma) fig. 7 collector current vs. collector-emitter voltage (fod814) ta= 25? i = 30ma pc (m ax.) 5ma 10ma 1m a f 20 m a 010203 0405060708090100 0 10 20 30 40 50 collector-emitter voltage v ce (v) collector current i c (ma) ta = 25? i i f = 30ma pc(max.) 5m a 10ma 20ma 30 25 20 15 10 5 0 01020304 05060708090 fig. 8 collector current vs. collector-emitter voltage (fod817)
?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 7 fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers typical electrical/optical characteristics (continued) (t a = 25? unless otherwise speci?d.) t est circuit for response time te st circuit for frequency response input r output input r d output l vc c td tr tf ts 90% 10% output r d l r vc c load resistance r l (k ? ) response time ( s) fig. 13 response time vs. load resistance frequency f (khz) voltage gain a v (db) fig. 14 frequency response ce v = 2 v ic = 2m a ta = 25c tr tf ts td r =10k l 1k 100 v ce = 2v ic = 2ma ta = 25? -20 0.1 0.1 0.2 0. 5 1 2 5 10 0.2 0.5 1 2 5 10 20 50 100 0.2 -10 0 15 2 0.5 1000 100 10 ambient temperature t a (?) fig. 15 collector dark current vs. ambient temperature collector dark current i ceo (na) -60 -40 -20 0 20 40 60 80 100 120 0.01 0.1 1 10 100 1000 10000 v ce = 20v
?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 8 fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers package dimensions pa c kage drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package speci?ations do not expand the terms of fairchilds worldwide terms and conditions, speci?ally the warranty therein, which covers fairchild products. always visit fairchild semiconductors online packaging area for the most recent package drawings: http://www .f airchildsemi.com/pac kaging/ through hole 0.4" lead spacing surface mount (footprint dimensions) surface mount s e a t in g p la n e 0.200 (5.10) 0.161 (4.10) 0.157 (4.00) 0.118 (3.00) 0.130 (3.30) 0.091 (2.30) 0.150 (3.80) 0.110 (2.80) 0.110 (2.79) 0.090 (2.29) 0.024 (0.60) 0.016 (0.40) 0.020 (0.51) typ 0.010 (0.26) 0.276 (7.00) 0.236 (6.00) 0.312 (7.92) 0.288 (7.32) se ati n g pla n e 0.200 (5.10) 0.161 (4.10) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00) 0.024 (0.60) 0.004 (0.10) 0.051 (1.30) 0.043 (1.10) 0.110 (2.79) 0.090 (2.29) 0.412 (10.46) 0.388 (9.86) 0.312 (7.92) 0.288 (7.32) 0.049 (1.25) 0.010 (0.26) 0.030 (0.76) lead coplanarity 0.004 (0.10) max 1.5 2.54 1.3 9 s ea t i ng p la ne 0.010 (0.26) 0.200 (5.10) 0.161 (4.10) 0.130 (3.30) 0.091 (2.30) 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) 0.110 (2.79) 0.090 (2.29) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00) 0.312 (7.92) 0.288 (7.32) 0.291 (7.40) 0.252 (6.40) 0.110 (2.80) 0.011 (1.80) 0.42 (10.66) 0.38 (9.66) note: all dimensions are in inches (millimeters) 0.393 (9.98) 0.300 (7.62)
?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 9 fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers ordering information marking information option part number example description s fod814s surface mount lead bend sd fod814sd surface mount; tape and reel 300 fod814300 vde approved 300w fod814300w vde approved, 0.4" lead spacing 3s fod8143s vde approved, surface mount 3sd fod8143sd vde approved, surface mount, tape & reel 1 2 6 4 3 5 de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code 5t wo digit work week ranging from ?1 to ?3 6 assembly package code y = manufactured in thailand ya = manufactured in china 814 x vy zz
?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 10 fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers carrier tape specifications note: all dimensions are in millimeters. symbol description dimensions in mm (inches) wt ape wide 16 ?0.3 (.63) p 0 pitch of sprocket holes 4 ?0.1 (.15) f p 2 distance of compartment 7.5 ?0.1 (.295) 2 ?0.1 (.079) p 1 distance of compartment to compartment 12 ?0.1 (.472) a0 compartment 10.45 ?0.1 (.411) b0 5.30 ?0.1 (.209) k0 4.25 ?0.1 (.167) p 2 p 1 p 0 1.75 0.1 0.3 0.05 1.55 0.05 f b0 a0 k0 w
?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 11 fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers lead free recommended ir reflow condition recommended wave soldering condition pro?e feature pb-sn solder assembly lead free assembly preheat condition (tsmin-tsmax / ts) 100? ~ 150? 60 ~ 120 sec 150? ~ 200? 60 ~120 sec melt soldering zone 183? 60 ~ 120 sec 217? 30 ~ 90 sec p eak temperature (tp) 240 +0/-5? 260 +0/-5? ramp-down rate 6?/sec max. 6?/sec max. pro?e feature for all solder assembly p eak temperature (tp) max 260? for 10 sec time (sec) ts (preheat) 25 c temperature ( c) tsmin tsmax tp soldering zon ramp-down
?006 fairchild semiconductor corporation www.fairchildsemi.com fod814 series, fod817 series rev. 1.1.5 12 fod814 series, fod817 series ?4-pin high operating temperature phototransistor optocouplers

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